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  • SCT20N120 silicon carbide Power MOSFET

    Silicon carbide Power MOSFET: 20 A, 1200 V, 215 mOhm, N-channel in a HiP247 package.
    With an industry-leading junction temperature rating of 200 °C, the 1200 V, 215 mΩ SCT20N120 extends ST’s portfolio of SiC MOSFETs.
    It allows switching frequencies up to three-times higher than similar-rated silicon IGBTs, resulting in more compact, reliable and efficient designs in applications such as solar inverters, high-voltage power supplies and high-efficiency drives.
    SCT20N120 information.
    SCT20N120 datasheet.

    Key Features
    ◾Very tight variation of on-resistance vs. temperature
    ◾Slight variation of switching losses vs. temperature
    ◾Very high operating temperature capability (200 °C)
    ◾Very fast and robust intrinsic body diode
    ◾Low capacitance
    ◾Easy to drive

    This article was originally published in forum thread: SCT20N120 silicon carbide Power MOSFET started by normnet View original post
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